Samsung announces UFS 2.0 memory modules 256GB and 850MB/s for smarpthone

Later this year, we will see the first smartphone with 256GB of storage built, capable of reading data at a maximum speed of 850MB/s.

Samsung has announced the start of volume production of the first chip UFS 2.0 256GB intended to be implemented on high-end smartphones in the near future. The specifications of the new modules are naturally very interesting, with Samsung, which confirms once again among the most capable and fastest companies to innovate in terms of memories: the new memory chip using V-NAND 3D modules, that allow you to significantly increase the storage and performance.

The company declares very promising numbers: 45,000 and 40,000 IOPS (input / output operations per second) read and write, respectively, equal to 176 and 156MB/s with 4KB blocks.

In comparison to the current smartphone technologies stop today to 19,000 and 14,000 IOPS. As for the sequential read speed, Samsung declares a matter of 850MB/s, even much faster than most of the solid-state drive (SSD) present on the consumer market.

Compared to the new Samsung SSD for PC chips for smartphones are still slower in terms of sequential write the data stated by the Korean is of about 260MB/s. The performance improvements are the result of the use of the new V-NAND 3D, but also of the exploitation of a new interface to two lines from 600MB/s, for the first time on a UFS 2.0 solution, which allows a substantial increase in bandwidth.

Samsung has designed the new memory chip UFS 2.0 256GB for ” media consumption 4K “, which occupy considerable space on the storage, on high-end devices with large displays. If the media are not interested in 4K, the company reminds that can be crammed inside the new chips around 50 movies at full HD resolution.

Any doubt about what the company means by ” devices with large displays, ” but all eyes in this case are of course aimed at Galaxy Note 6, expected by the end of 2016.